多晶硅超純水設備主要用在多晶硅片清洗中，多晶硅片,半導體器件生產中硅片須經嚴格清洗。微量污染也會導致器件失效。清洗的目的在于清除表面污染雜質，包括有機物和無機物。這些雜質有的以原子狀態或離子狀態，有的以薄膜形式或顆粒形式存在于硅片表面。有機污染包括光刻膠、有機溶劑殘留物、合成蠟和人接觸器件、工具、器皿帶來的油脂或纖維。無機污染包括重金屬金、銅、鐵、鉻等，嚴重影響少數載流子壽命和表面電導;堿金屬如鈉等，引起嚴重漏電,顆粒污染包括硅渣、塵埃、細菌、微生物、有機膠體纖維等，會導致各種缺陷。

　　為什么(me)光伏行業(ye)晶體(ti)管、半導體(ti)集成電路清(qing)洗一(yi)定要用(yong)超純水?

　　在晶體(ti)(ti)管、集(ji)成電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)(lu)生產(chan)(chan)(chan)中，純(chun)水(shui)(shui)(shui)(shui)主要(yao)用(yong)于清洗硅(gui)片，另有少量(liang)用(yong)于藥液(ye)配制，硅(gui)片氧化(hua)的(de)(de)(de)(de)水(shui)(shui)(shui)(shui)汽源，部分(fen)設(she)備的(de)(de)(de)(de)冷(leng)卻水(shui)(shui)(shui)(shui)，配制電(dian)(dian)(dian)(dian)(dian)(dian)(dian)鍍液(ye)等(deng)(deng)。集(ji)成電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)(lu)生產(chan)(chan)(chan)過程(cheng)中的(de)(de)(de)(de)80%的(de)(de)(de)(de)工(gong)序需要(yao)使(shi)用(yong)高(gao)(gao)純(chun)水(shui)(shui)(shui)(shui)清洗硅(gui)片，水(shui)(shui)(shui)(shui)質(zhi)的(de)(de)(de)(de)好壞與集(ji)成電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)(lu)的(de)(de)(de)(de)產(chan)(chan)(chan)品(pin)質(zhi)量(liang)及生產(chan)(chan)(chan)成品(pin)率(lv)關系很大。水(shui)(shui)(shui)(shui)中的(de)(de)(de)(de)堿金(jin)(jin)屬(shu)(K、Na等(deng)(deng))會(hui)(hui)(hui)使(shi)絕緣膜耐壓不良，重金(jin)(jin)屬(shu)(Au、Ag、Cu等(deng)(deng))會(hui)(hui)(hui)使(shi)PN結耐壓降低(di)，Ⅲ族元(yuan)素(B、Al、Ga等(deng)(deng))會(hui)(hui)(hui)使(shi)N型(xing)半導(dao)體(ti)(ti)特性(xing)(xing)惡(e)化(hua)，Ⅴ族元(yuan)素(P、As、Sb等(deng)(deng))會(hui)(hui)(hui)使(shi)P型(xing)半導(dao)體(ti)(ti)特性(xing)(xing)惡(e)化(hua)，水(shui)(shui)(shui)(shui)中細(xi)菌高(gao)(gao)溫碳化(hua)后的(de)(de)(de)(de)磷(約占灰分(fen)的(de)(de)(de)(de)20-50%)會(hui)(hui)(hui)使(shi)P型(xing)硅(gui)片上的(de)(de)(de)(de)局部區域變為(wei)N型(xing)硅(gui)而(er)導(dao)致器件(jian)性(xing)(xing)能變壞，水(shui)(shui)(shui)(shui)中的(de)(de)(de)(de)顆粒(li)(包括細(xi)菌)如吸附在硅(gui)片表面，就會(hui)(hui)(hui)引(yin)起電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)(lu)短路(lu)(lu)(lu)或特性(xing)(xing)變差。集(ji)成電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)(lu)(DRAM)集(ji)成度(du)(du)16K的(de)(de)(de)(de)要(yao)求(qiu)是(shi)(shi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)率(lv)16兆歐(ou)以上，集(ji)成電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)(lu)(DRAM)集(ji)成度(du)(du)64K的(de)(de)(de)(de)要(yao)求(qiu)是(shi)(shi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)率(lv)16兆歐(ou)以上，集(ji)成電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)(lu)(DRAM)集(ji)成度(du)(du)256K的(de)(de)(de)(de)要(yao)求(qiu)是(shi)(shi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)率(lv)≥17 MΩ•cm，集(ji)成電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)(lu)(DRAM)集(ji)成度(du)(du)1M的(de)(de)(de)(de)要(yao)求(qiu)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)率(lv)≥18MΩ•cm，集(ji)成電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)(lu)(DRAM)集(ji)成度(du)(du)4M的(de)(de)(de)(de)要(yao)求(qiu)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)率(lv)≥18MΩ•cm，集(ji)成電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)(lu)(DRAM)集(ji)成度(du)(du)16M的(de)(de)(de)(de)要(yao)求(qiu)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)率(lv)≥18.2MΩ•cm。

　　執行標準

　　JBT 7621-1994 電(dian)力半導體器(qi)件工藝用高純水

　　GBT11446.1-2013電子級超純(chun)水中國國家(jia)標準(zhun)

　　GB6682-2000中國國家(jia)實(shi)驗室用水GB6682-2000

　　ASTM D5127-2007美國電子和半導體(ti)水質標(biao)準(zhun)

　　GB/T 11446.3——1997 電子級水(shui)測(ce)試方法通則

　　GB/T 11446.4——l997 電子級水電阻率的測(ce)試方法

　　GB/T 11446.5——1997 電子(zi)級水中痕(hen)量金屬的原子(zi)吸收分(fen)光光度測試方法

　　GB/T 11446.6——1997 電子級(ji)水中(zhong)二氧(yang)化硅的(de)分光(guang)光(guang)度測(ce)試方法

　　GB/T 11446.7——1997 電(dian)子(zi)級水中痕量氯離子(zi)、硝(xiao)酸根(gen)離子(zi)、磷酸根(gen)離子(zi)、硫(liu)酸根(gen)離子(zi)的離子(zi)色譜測試方法

　　GB/T 11446.8——1997 電子(zi)級水中(zhong)總有機碳的測試方(fang)法(fa)

　　GB/T 11446.9——1997 電(dian)子級水(shui)中微粒的儀(yi)器測試方法

　　GB/T 11446.10——1997 電子級水細菌(jun)總(zong)數的(de)濾膜(mo)培養(yang)測試方法

　　我司整合(he)了國內外先進的工藝及技(ji)術，采用預(yu)處理+雙級(ji)反滲透+EDI+雙級(ji)拋光混(hun)床(chuang)+終端濾器。

　　超純水(shui)(shui)一方面在(zai)于制水(shui)(shui)工藝，另外一個(ge)重要的方面在(zai)于超純水(shui)(shui)的輸送(song)，我司(si)采用(yong)(yong)PVDF材(cai)質(zhi)管道，保證終(zhong)端用(yong)(yong)水(shui)(shui)點的水(shui)(shui)質(zhi)達到(dao)使用(yong)(yong)要求。